English
Language : 

TPC6113 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Lithium Ion Battery Applications Power Management Switch Applications
TPC6113
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6113
Lithium Ion Battery Applications
Power Management Switch Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.)
( VGS = −4.5V)
• Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −0.2 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
Tch
Tstg
−20
V
−20
V
±12
V
−5
A
−20
2.2
W
0.7
W
1.6
mJ
−2.5
A
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: (Note 1), (Note 2), (Note 3) : See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Circuit Configuration
654
123
1
2009-12-26