TPC6111 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)

TPC6111
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
TPC6111
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 33 mΩ (typ.)
• Low leakage current: I_DSS = −10 μA (max) (V_DS = −20 V)
• Enhancement mode: V_th = −0.3 to −1.0 V
(V_DS = −10 V, I_D = −1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
−20
V
−20
V
±8
V
−5.5
A
−22
2.2
W
0.7
W
5.1
mJ
−2.8
A
0.019
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8 °C/W
178.5 °C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Circuit Configuration
654
123
1
2009-05-12