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TPC6109-H Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) | |||
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TPC6109-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPC6109-H
High-Efficiency DC-DC Converter Applications
⢠Small footprint due to small and thin package
⢠Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.)
(VDS = â10 V)
⢠High forward transfer admittance: |Yfs| = 8.0 S (typ.)
⢠Low leakage current: IDSS = â10 μA (max) (VDS = â30 V)
⢠Enhancement mode: Vth = â0.8 to â2.0 V (VDS = â10 V, ID = â1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (t = 5 s) (Note 2a)
Drain power dissipation (t = 5 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
(Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
â30
V
â30
V
±20
V
â5
A
â20
2.2
W
0.7
16.3
mJ
â5
A
0.055
mJ
150
°C
â55 to150 °C
1. Drain
2. Drain
3. Gate
4. Source
5. Drain
6. Drain
JEDEC
â¯
JEITA
â¯
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: For Notes 1 to 5, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
654
123
1
2010-02-01
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