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TPC6108_08 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Notebook PC Applications | |||
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TPC6108
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSâ
£)
TPC6108
Notebook PC Applications
Portable Equipment Applications
Unit: mm
⢠Small footprint due to small and thin package
⢠Low drain-source ON-resistance: RDS (ON) = 50 mΩ (typ.)
⢠High forward transfer admittance: |Yfs| = 7.4 S (typ.)
⢠Low leakage current: IDSS = â10 μA (max) (VDS = â30 V)
⢠Enhancement mode: Vth = â0.8 to â2.0 V (VDS = â10 V, ID = â1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (t = 5 s) (Note 2a)
Drain power dissipation (t = 5 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
(Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
â30
V
â30
V
±20
V
â4.5
A
â18
2.2
W
0.7
1.3
mJ
â2.25
A
0.22
mJ
150
°C
â55 to 150 °C
Drain
Drain
Gate
Source
Drain
Drain
JEDEC
â
JEITA
â
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (âHandling Precautionsâ/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
Rth (ch-a)
Rth (ch-a)
56.8 °C/W
178.5 °C/W
Note: For Notes 1 to 5, see page 3.
Caution: This transistor is an electrostatic-sensitive device. Handle with care.
Circuit Configuration
654
123
1
2008-12-04
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