TPC6103 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon P Channel MOS Type (U-MOS III)

TPC6103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPC6103
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 29 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 13 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −12 V)
• Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V,ID = −200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
−12
V
−12
V
±8
V
−5.5
A
−22
2.2
W
0.7
W
5.3
mJ
−2.75
A
0.22
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
654
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to
ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to
ambient (t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8 °C/W
178.5 °C/W
Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2004-07-06