TPC6102_06 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Notebook PC Applications Portable Equipment Applications

TPC6102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
TPC6102
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 48 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 6 S (typ.)
• Low leakage current: I_DSS = −10 μA (max) (V_DS = −30 V)
• Enhancement mode: V_th = −0.8 to −2.0 V (V_DS = −10 V, I_D = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
−30
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
−30
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC (Note 1)
I_D
Pulse (Note 1)
I_DP
−4.5
A
−18
Drain power dissipation
(t = 5 s)
(Note 2a)
P_D
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
P_D
0.7
W
Single pulse avalanche energy (Note 3)
E_AS
Avalanche current
I_AR
3.3
mJ
−2.25
A
Repetitive avalanche energy (Note 4)
E_AR
0.22
mJ
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8
178.5
°C/W
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic- ensitive device. Please handle with caution.
Circuit Configuration
654
123
1
2006-11-16