TPC6012 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Notebook PC Applications Portable Equipment Applications

TPC6012
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPC6012
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to small and thin package
• Low drain-source ON resistance: R_{DS (ON)} = 20 mΩ (typ.)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 20 V)
• Enhancement mode: V_th = 0.5 to 1.2 V (V_DS = 10 V, I_D = 200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
T_ch
T_stg
20
V
20
V
± 12
V
6
A
24
2.2
W
0.7
W
2.3
mJ
3
A
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to ambient (t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient (t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8 °C/W
178.5 °C/W
Note: (Note 1), (Note 2), (Note 3): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
Circuit Configuration
654
123
1
2009-08-26