TPC6011 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Notebook PC Applications Portable Equipment Applications

TPC6011
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIV)
TPC6011
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON-resistance: R_{DS (ON)} = 16 mΩ (typ.)
( V_GS = 10V)
• Low leakage current: I_DSS = 10 μA (max) (V_DS = 30 V)
• Enhancement mode: V_th = 1.3 to 2.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
30
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
30
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC
(Note 1)
I_D
Pulse
(Note 1)
I_DP
6
A
24
Drain power dissipation
(t = 5 s)
(Note 2a)
P_D
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
P_D
0.7
W
Single pulse avalanche energy (Note 3)
E_AS
2.3
mJ
Avalanche current
I_AR
3
A
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8
178.5
°C/W
°C/W
Note: (Note 1), (Note 2), (Note 3): See other pages.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2010-02-15