TPC6005 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPC6005
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6005
Notebook PC Applications
Portable Equipment Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 21 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 10 S (typ.)
· Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
· Enhancement-model: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
DC
Drain current
(Note 1)
Pulse
(Note 1)
Drain power dissipation
(t = 5 s)
(Note 2a)
Drain power dissipation
(t = 5 s)
(Note 2b)
Single pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±12
V
6
A
24
2.2
W
0.7
W
5.8
mJ
3
A
0.22
mJ
150
°C
-55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8
178.5
°C/W
°C/W
Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next
page.
This transistor is an electrostatically sensitive device. Please handle it
with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
654
123
Marking (Note 5)
S2E
1
2001-12-17