TPC6004_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Notebook PC Applications Portable Equipment Applications

TPC6004
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPC6004
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 11 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
20
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
20
V
Gate-source voltage
V_GSS
±12
V
Drain current
DC
(Note 1)
I_D
Pulse
(Note 1)
I_DP
6
A
24
Drain power dissipation
(t = 5 s)
(Note 2a)
P_D
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
P_D
0.7
W
Single pulse avalanche energy (Note 3)
E_AS
5.8
mJ
Avalanche current
I_AR
3
A
Repetitive avalanche energy (Note 4)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
0.22
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
Max
56.8
178.5
Unit
°C/W
°C/W
654
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
This transistor is an electrostatic-sensitive device. Please handle with caution.
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2007-01-15