TPC6001 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Notebook PC Applications Portable Equipment Applications

TPC6001
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC6001
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 15 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 µA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
20
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
20
V
Gate-source voltage
V_GSS
±12
V
Drain current
DC (Note 1)
I_D
Pulse (Note 1)
I_DP
6
A
24
Drain power dissipation
(t = 5 s)
(Note 2a)
P_D
2.2
W
Drain power dissipation
(t = 5 s)
(Note 2b)
P_D
0.7
W
Single pulse avalanche energy
(Note 3)
E_AS
5.8
mJ
Avalanche current
I_AR
Repetitive avalanche energy (Note 4)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
3
A
0.22
mJ
150
°C
−55 to 150
°C
Thermal Characteristics
JEDEC
―
JEITA
―
TOSHIBA
2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
654
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient
(t = 5 s)
(Note 2b)
R_{th (ch-a)}
R_{th (ch-a)}
56.8
178.5
°C/W
°C/W
Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.
This transistor is an electrostatic-sensitive device. Please handle it with caution.
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2004-07-06