TMD7185-2 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – MICROWAVE POWER MMIC AMPLIFIER

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER MMIC AMPLIFIER
TMD7185-2
FEATURES
n HIGH POWER
P1dB=33.0dBm at 7.1GHz to 8.5GHz
n HIGH GAIN
G1dB=28.0dB at 7.1GHz to 8.5GHz
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain Supply Voltage
Gate Supply Voltage
Input Power
Flange Temperature
Storage Temperature
SYMBOL
VDD
VGG
Pin
Tf
Tstg
UNIT
V
V
dBm
°^C
°C
RATING
15
-10
10
-30 ∼ +80
-65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25_°C )
CHARACTERISTICS
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Input VSWR
3^rd Order Intermodulation
Distortion
SYMBOL
P1dB
G1dB
CONDITIONS
VDD= 10V
VGG= -5V
UNIT
dBm
dB
IDD
f = 7.1 – 8.5GHz
A
VSWRin

IM₃ Po (S.C.L.)=22.0 dBm dBc
MIN. TYP. MAX.
32.0 33.0 
27.0 28.0 
 1.4 1.7
  3.0
-42 -45 
uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar.2006