TMD5872-2 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – MICROWAVE POWER MMIC AMPLIFIEMICROWAVE AMPLIFIER

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER MMIC AMPLIFIER
TMD5872-2
FEATURES
HIGH POWER
P1dB=34.0dBm (TYP.)
HIGH POWER ADDED EFFICIENCY
ηadd=21% (TYP.)
HIGH GAIN
G1dB=28.0dB (TYP.)
BROADBAND OPERATION
f=5.8-7.2GHz
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain Supply Voltage
Gate Supply Voltage
Input Power
Flange Temperature
Storage Temperature
SYMBOL
VDD
VGG
Pin
Tf
Tstg
UNIT
V
V
dBm
°C
°C
RATING
15
-10
10
-30 ∼ +80
-65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Operating Frequency
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Gain Flatness
Drain Current
Power Added Efficiency
Input VSWR (small signal)
SYMBOL
f
P1dB
G1dB
∆G
IDD
ηadd
VSWRi
CONDITION
VDD= 10V
VGG= -5V
UNIT MIN. TYP. MAX.
GHz 5.8  7.2
dBm 32.0 34.0 
dB 25.0 28.0 
dB   ±2.0
A
 1.2 1.6
%
 21 

 2.0:1 3.0:1
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Revised August 2000