TMD1925-3 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – MICROWAVE POWER MMIC AMPLIFIER

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER MMIC AMPLIFIER
TMD1925-3
Preliminary
FEATURES
„ Suitable for Digital Communications
„ Low Intermodulation Distortion
„ High Power P1dB=34dBm(min) @1.9 to 2.5GHz
„ High Gain G1dB=27dB(min)@1.9 to 2.5GHz
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTICS
DRAIN SUPPLY VOLTAGE
GATE SUPPLY VOLTAGE
INPUT POWER
STORAGE TEMPERATURE
( Ta= 25°C )
SYMBOL
VDD
VGG
Pin
Tstg
UNIT
V
V
dB
°C
RATINGS
15
-4
13
-65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS
SYMBOL CONDITION
Operating Frequency
f
Output Power at 1dB
P1dB
Gain Compression Point
VDD=10V
Power Gain at 1dB
G1dB
IDDset=1.2A
Gain Compression Point
Drain Current
IDD
@ P1dB
Input Return Loss

Small Signal
Output Return Loss
Level

UNIT
GHz
dBm
dB
A
dB
dB
3rd Order Intermodulation
IM3
NOTE
dBc
Distortion
NOTE: Two Tone Test,Po=17dBm(Single Carrier Level)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C)
CHARACTERISTICS SYMBOL CONDITION
UNIT
Thermal Resistance
Rth (c-c) Channel to Case °C/W
MIN.
1.9
34.0
27.0

10


MIN

TYP.

35.0
29.0
1.6

10
-52
TYP
6
MAX.
2.5


1.9



MAX
6.5
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA for any infringements of patents or other rights of the third parties that may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of TOSHIBA or others.
‹ The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before
proceeding with design of equipment incorporating this product.
Revised Nov.2001
-1-