TMD1414-2C Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – MICROWAVE POWER MMIC AMPLIFIER

MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
MICROWAVE POWER MMIC AMPLIFIER
TMD1414-2C
FEATURES
n HIGH POWER
P1dB=34.5dBm at 13.75GHz to 14.5GHz
n HIGH GAIN
G1dB=26.0dB at 13.75GHz to 14.5GHz
n BROAD BAND INTERNALLY MATCHED
n HERMETICALLY SEALED PACKAGE
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain Supply Voltage
Gate Supply Voltage
Input Power
Flange Temperature
Storage Temperature
SYMBOL
VDD
VGG
Pin
Tf
Tstg
UNIT
V
V
dBm
°C
°^C
RATING
10
-10
20
-40 ∼ +90
-65 ∼ +175
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Operating Frequency
Output Power at 1dB Gain
Compression Point
1dB Gain Compression
Point
Gain Flatness
Drain Current
Power Added Efficiency
SYMBOL
f
P1dB
G1dB
∆G
IDD
ηadd
CONDITIONS
VDD=7V
VGG=-5V
UNIT MIN. TYP. MAX.
GHz 13.75  14.5
dBm 32.0 34.5 
dB 21.0 26.0 
dB   ±1.0
A
 1.4 1.8
%
 29 
uThe information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Mar.2006