TLP785GBFC Datasheet, PDF (1/16 Pages) Toshiba Semiconductor – Office Equipment Household Appliances

TLP785,TLP785F
TOSHIBA Photocoupler GaAs IRED & Photo−Transistor
TLP785,TLP785F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
TLP785
Unit: mm
The TOSHIBA TLP785 consists of a silicone phototransistor optically
coupled to a gallium arsenide (GaAs) infrared emitting diode in a four
lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kV_RMS (min)).
TLP785F is a lead forming type for the long creepage surface mounting
of TLP785.
• TLP785: 7.62mm pitch type DIP4
• TLP785F: 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000V_rms (min.)
• UL approved: UL1577, file No. E67349
• BSI under application: BS EN60065:2002
BS EN60950-1:2006
• SEMKO under application:EN60065:2002
EN60950-1:2001, EN60335-1:2002
• Option(D4)type
VDE approved: DIN EN60747-5-2
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
.
• Construction mechanical rating
7.62mm Pitch
Standard Type
Creepage distance
7.0mm(min)
Clearance
7.0mm(min)
Insulation thickness
0.4mm(min)
Inner creepage distance 4.0mm(min)
10.16mm Pitch
TLPxxxF Type
8.0mm(min)
8.0mm(min)
0.4mm(min)
4.0mm(min)
1
TOSHIBA
11-5L1
Weight: 0.32 g (typ.)
TLP785F
Unit: mm
TOSHIBA
11-5L102
Weight: 0.32g (typ.)
Pin Configurations
(top view)
1
4
2
3
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
2012-02-20