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TLP762JF_07 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Triac | |||
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TOSHIBA Photocoupler GaAs Ired & PhotoâTriac
TLP762JF
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
TLP762JF
Unit: mm
The TOSHIBA TLP762JF consists of a GaAs infrared LED optically
coupled to a photo-triac in a 6 lead plastic DIP.
⢠Peak off-state voltage: 600V (Min.)
⢠Trigger LED current: 10mA (Max.)
⢠On-state current: 100mA (Max.)
⢠UL recognized: UL1577, file No. E67349
⢠BSI approved: BS EN60065: 2002,
Certificate No.8945
BS EN60950-1: 2002,
Certificate No.8946
⢠SEMKO approved: SS EN60065 (EN60065, 1993)
SS EN60950 (EN60950, 1992)
SS EN60335 (EN60335, 1988)
Certificate No. 9522145
⢠Isolation voltage: 4000Vrms (Min.)
⢠Option (D4) type
VDE approved: DIN EN 60747-5-2
Certificate No. 40009373
Maximum operating Insulation Voltage: 1130VPK
Highest permissible over voltage: 6000VPK
(Note) When an EN60747-5-2 approved type is needed,
please designate the âOption (D4)â.
⢠Creepage distance: 8.0mm (Min.)
Clearance: 8.0mm (Min.)
Internal creepage path: 4.0mm (Min.)
Insulation thickness: 0.4mm (Min.)
Please refer to the technical data of TLP762J for maximum ratings and
electrical characteristics.
TOSHIBA
11â7A1002
Weight: 0.42g (Typ.)
Pin configuration (top view)
1
6
2
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Terminal 1
6 : Terminal 2
1
2007-10-01
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