TLP759F Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Transistor Invertor

TOSHIBA Photocoupler GaAℓAs Ired + Photo−IC
TLP759F
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Transistor Invertor
TLP759F
Unit in mm
The TOSHIBA TLP759F consists of a GaAℓAs high-output light
emitting diode and a high speed detector of one chip photo diode-
transistor. This unit is 8-lead DIP package.
TLP759F has no internal base connection, and a faraday shield
integrated on the photodetector chip provides an effective common
mode noise transient immunity.
So this is suitable for application in noisy environmental condition.
All parameters are tested to the specification of TLP759.
· Isolation voltage: 5000 Vrms (min.)
· Switching speed: tpHL = 0.3µs (typ.)
tpHL = 0.5µs (typ.) (RL = 1.9 kΩ)
· TTL compatible
· UL recognized: UL1577, file no. E67349
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92
Certificate no. 83676
Maximum operating insulation: 1140VPK
Highest permissible over voltage: 6000VPK
(Note) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Creepage distance: 8.0mm
Clearance: 8.0mm
Insulation thickness: 0.4mm
TOSHIBA
11−10C402
Weight: 0.54g
Pin Configuration(top view)
1
2
3
4 _SHIELD
8
1: N.C.
2: Anode
3: Cathode
7 _{4: N.C.}
5: Emitter(GND)
6 6: Collector(output)
7: N.C.
5 ^{8: V}CC
Schematic
I_F
2
V_F
3
SHIELD
I_CC
I_O
V_CC
8
V_O
6
GND
5
1
2002-09-25