TLP751_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – GaAℓAs Ired + Photo IC

TOSHIBA Photocoupler GaAℓAs Ired + Photo IC
TLP751
Digital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
TLP751
Unit in mm
The TOSHIBA TLP751 consists of GaAℓAs high−output light
emitting diode and a high speed detector of one chip photo diode−
transistor. This unit is 8−lead DIP.
TLP751 has internal base connection. This base pin should be used for
analog application or enable operation. If base pin is open, output signal
will be noisy by environmental condition. For this case, TLP750 is
suitable.
• Switching speed: t_pHL = 0.3μs (typ.)
t_pLH = 0.5μs (typ.)(R_L=1.9kΩ)
• TTL compatible
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002,
Certificate no. 8869
BS EN60950-1: 2002,
Certificate no. 8870
• Isolation voltage: 5000Vrms(min.)
• Option(D4)type
VDE approved: DIN EN 60747-5-2,
Certificate no. 40009302
Maximum operating insulation voltage: 890V_PK
Highest permissible over voltage: 8000V_PK
(Note) When a EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”
• Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)
TOSHIBA
Weight: 0.54g
11−10C4
Pin Configuration(top view)
Schematic
1
2007-10-01