TLP750 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAℓAs Ired + Photo IC

TOSHIBA Photocoupler GaAℓAs Ired + Photo IC
TLP750
TLP750
Degital Logic Ground Isolation
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Analog Signal Isolation
Unit in mm
The TOSHIBA TLP750 consists of GaAℓAs high−output light emitting
diode and a high speed detector of one chip photo diode−transistor.
This unit is 8−lead DIP.
TLP750 has no internal base connection, and is suitable for application in
noisy environmental conditions.
· Switching speed: tpHL=0.3µs(typ.)
· Switching speed: tpLH=0.5µs(typ.)(RL=1.9kΩ)
· UL recognized: UL1577, file No. E67349
· BSI approved: BS EN60065: 1994,
Certificate No.7613
BS EN60950: 1992,
Certificate No.7614
· Isolation voltage: 5000Vrms(min.)
· Option(d4)type
VDE approved: DIN VDE0884/06.92,
Certificate No.68384
Maximum operating insulation voltage: 890VPK
Highest permissible over voltage: 8000VPK
(Note) When a VDE0884 approved type is needed,
please designate the “Option(D4)”
· Creepage distance: 6.4mm(min.)
Clearance: 6.4mm(min.)
Insulation thickness: 0.4mm(min.)
TOSHIBA
Weight: 0.54g
11−10C4
Pin Configuration (top view)
1 : N.C.
1
8
2 : Anode
2
7
3 : Cathode
4 : N.C.
3
6 5 : Emitter
6 : Collector
4
5
7 : N.C.
8 : Cathode
Schematic
I_F
2
V_F
3
I_CC
V_CC
8
I_O
V_O
6
GND
5
1
2002-09-25