TLP747JF_07 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Thyristor

TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
TLP747JF
TLP747JF
Office Machine
Switching Power Supply
Unit in mm
The TOSHIBA TLP747JF consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747J.
(both condition and limits)
• Peak off−state voltage: 600V (min.)
• Trigger LED current: 15mA (max.)
• On−state current: 150mA (max.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065: 2002,
certificate No. 7364
BS EN60950-1: 2002,
certificate No. 7365
• SEMCO approved:EN60065,EN60950-1,EN60335-1
Certificate no.302586
• Isolation voltage: 4000Vrms (min.)
• Option (D4) type
• VDE approved: DIN EN 60747-5-2,
certificate no. 40009373
Maximum operating insulation voltage: 890, 1130V_PK
Highest permissible over voltage: 6000, 8000V_PK
(Note) When an EN 60747-5-2 approved type is needed,
please designate the “ Option (D4) ”
• Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
• Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft Nov.84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
TOSHIBA
Weight: 0.42g
11−7A802
Pin Configurations (top view)
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Cathode
5 : Anode
6 : Gate
1
2007-10-01