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TLP747GF_07 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Thyristor | |||
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TOSHIBA Photocoupler GaAs Ired & PhotoâThyristor
TLP747GF
Office Machine
Switching Power Supply
TLP747GF
Unit in mm
The TOSHIBA TLP747GF consists of a photoâthyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747G.
(both condition and limits)
⢠Peak offâstate voltage: 400V min.
⢠Trigger LED current: 15mA max.
⢠Onâstate current: 150mA max.
⢠UL recognized: UL1577, file no. E67349
⢠BSI approved: BS EN60065: 2002
Certificate no. 7364
BS EN60950-1: 2002
Certificate no. 7365
⢠SEMCO approved:EN60065,EN60950-1,EN60335-1
Certificate no.302586
⢠Isolation voltage: 4000Vrms min.
⢠Option (D4) type
VDE approved: DIN EN 60747-5-2,
Certificate no.40009373
Maximum operating insulation voltage: 890, 1130VPK
Highest permissible over voltage: 6000, 8000VPK
TOSHIBA
11â7A802
Weight: 0.42 g
(Note) When an EN 60747-5-2 approved type is needed,
please designate the â Option (D4) â
⢠Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
⢠Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configuration (top view)
1
6
2
5
3
4
1 : ANODE
2 : CATHODE
3 : NC
4 : CATHODE
5 : ANODE
6 : GATE
1
2007-10-01
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