TLP747GF Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor

TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
TLP747GF
Office Machine
Switching Power Supply
TLP747GF
Unit in mm
The TOSHIBA TLP747GF consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP747G.
(both condition and limits)
· Peak off−state voltage: 400V min.
· Trigger LED current: 15mA max.
· On−state current: 150mA max.
· UL recognized: UL1577, file no. E67349
· BSI approved: BS EN60065: 1994
Certificate no. 7364
BS EN60950: 1992
Certificate no. 7365
· SEMKO approved: SS4330784, certificate no. 9325163
no. 9522142
· Isolation voltage: 4000Vrms min.
· Option (D4) type
VDE approved: DIN VDE0884 / 06.92,
Certificate no.74286, 91808
Maximum operating insulation voltage: 890, 1130VPK
Highest permissible over voltage: 6000, 8000VPK
TOSHIBA
11−7A802
Weight: 0.42 g
(Note) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
· Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configuration (top view)
1
6
2
5
3
4
1 : ANODE
2 : CATHODE
3 : NC
4 : CATHODE
5 : ANODE
6 : GATE
1
2002-09-25