TLP747G Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Thyristor

TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor
TLP747G
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
TLP747G
Unit in mm
The TOSHIBA TLP747G consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
• Peak off−state voltage: 400 V (min.)
• Trigger LED current: 15 mA (max.)
• On−state current: 150 mA (max.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065: 2002
Certificate No. 7364
BS EN60950-1: 2002
Certificate No. 7365
• SEMCO approved:EN60065,EN60950-1,EN60335-1
Certificate no.302586
• Isolation voltage: 4000 Vrms (min.)
• Option (D4) type
VDE approved: DIN EN 60747-5-2,
Certificate No. 40009373
Maximum operating insulation voltage: 630, 890 V_PK
Highest permissible over voltage: 6000, 8000 V_PK
(Note) When a EN 60747-5-2 approved type is needed,
please designate the “option (D4)”
7.62mm pich
• Creepage distance
standard type
: 7.0mm (min.)
Clearance
: 7.0mm (min.)
Insulation thickness : 0.5mm (min.)
10.16mm pich
TLP×××F type
8.0mm (min.)
8.0mm (min.)
0.5mm (min.)
TOSHIBA
Weight: 0.42 g
11−7A8
Pin Configuration (top view)
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Cathode
5 : Anode
6 : Gate
1
2007-10-01