TLP741J_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – GaAs IRed & Photo-Thyristor

TOSHIBA Photocoupler GaAs IRed & Photo-Thyristor
TLP741J
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
TLP741J
Unit in mm
The TOSHIBA TLP741J consists of a photo−thyristor optically coupled
to a gallium arsenide infrared emitting diode in a six lead plastic DIP
package.
• Peak off−state voltage: 600 V (min.)
• Trigger LED current: 10 mA (max.)
• On−state current: 150 mA (max.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002
Certificate no. 8877
BS EN60950-1: 2002
Certificate no. 8878
Isolation voltage: 4000 V_rms (min.)
• Option (D4) type
VDE approved: DIN EN 60747-5-2
Certificate no. 40009302
Maximum operating insulation voltage: 630 V_PK
Highest permissible over voltage: 6000 V_PK
(Note) When a EN 60747-5-2 approved type is needed,
please designate the “option (D4)”
TOSHIBA
Weight: 0.35 g
11−7B1
Pin Configuration (top view)
• Creepage distance:
7.62 mm pich
standard type
7.0 mm (min.)
Clearance:
7.0 mm (min.)
Insulation thickness: 0.5 mm (min.)
10.16 mm pich
(LF2) type
8.0 mm (min.)
8.0 mm (min.)
0.5 mm (min.)
1
6
2
5
3
4
1 : ANODE
2 : CATHODE
3 : N.C.
4 : CATHODE
5 : ANODE
6 : GATE
1
2007-10-01