TLP733F_07 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Switching Power Supply

TLP733F,TLP734F
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP733F,TLP734F
Office Machine
Switching Power Supply
Unit in mm
The TOSHIBA TLP733F and TLP734F consists of a photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP.
All parameters are tested to the specification of TLP733 and TLP734.
(both condition and limits)
• Collector−emitter voltage: 55 V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• UL recognized: UL1577, file no. E67349
• BSI approved: BS EN60065: 2002
Certificate no. 7364
BS EN60950-1: 2002
Certificate no. 7365
• SEMCO approved:EN60065,EN60950-1,EN60335-1
Certificate no.302586
• Isolation voltage: 4000 Vrms (min.)
• Option (D4) type
VDE approved: DIN EN 60747-5-2,
Certificate no. 40009373
Maximum operating insulation voltage: 890, 1130 V_PK
Highest permissible over voltage: 6000, 8000 V_PK
TOSHIBA
11−7A802
Weight: 0.42 g
Pin Configurations (top view)
(Note) When a EN 60747-5-2 approved type is needed,
please designate the “ Option (D4) ”
• Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Internal creepage path: 4.0mm (min.)
Insulation thickness: 0.5mm (min.)
• Conforming safety standards:
DIN 57 804. VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / draft nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
1
2007-10-01