TLP722_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Photo−Diode

TOSHIBA Photocoupler Photo−Diode
TLP722
TLP722
The TOSHIBA TLP722 consists of a photo−diode optically coupled to a
gallium arsenide infrared emitting diode in a four lead plastic DIP
(DIP4).
TLP722: Single circuit
• Cathode−anode voltage: 30V (max)
• Current transfer ratio: 0.1% (min)
• Input / output isolation voltage: 4000V_rms (min)
• Operating temperature range: −55~100°C
• Storage temperature range: −55~125°C
• UL recognized: UL1577, E67349
• VDE approved: EN60747-5-2
Maximum operating insulation voltage: 890V_PK
Maximum permissible over voltage: 8000V_PK
(Note): When an EN60747-5-2 approved type is needed,
please designate the “ Option (D4) ”
• SEMKO approved product: SS EN60950,
approved No. 9808324 / 01
• Construction mechanical rating
Creepage distance
Clearance
Insulation thickness
TLP722 type
7.0 mm
7.0 mm
0.4 mm
TLP722F type
8.0 mm
8.0 mm
0.4 mm
Unit in mm
TOSHIBA
Weight: 0.28 g
11−5B2
Pin Configuration
(top view)
1
2007-10-01