TLP719_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Microprocessor system interfaces

TOSHIBA PHOTOCOUPLER GaAℓAs IRED + PHOTO−IC
TLP719
TLP719
Digital logic ground isolation
Line receivers
Microprocessor system interfaces
Switching power supply feedback control
Transistor invertors
4.58±0.25
654
Unit in mm
The TOSHIBA TLP719 consists of a GaAℓAs high-output light-emitting diode and a
high-speed detector.
This unit is a 6-lead SDIP. The TLP719 is 50% smaller than the 8-pin DIP and
meets the reinforced insulation class requirements of international safety standards.
Therefore the mounting area can be reduced in equipment requiring safety standard
certification.
The TLP719 has a Faraday shield integrated on the photodetector chip to provide
an effective common mode noise transient immunity. Therefore this product is
suitable for application in noisy environmental conditions.
123
1.27±0.2
0.4±0.1
7.62±0.25
1.25±0.25
9.7±0.3
• Open collector
• Package type
• Isolation voltage
: SDIP6
: 5000 Vrms (min)
TOSHIBA
11-5J1
Weight：0.26 g (t yp .)
11-5J1
• Common mode transient immunity
• Switching speed
• TTL compatible
: ±10 kV/us(min) @V_CM = 400 V
: t_pHL/ t_pLH = 0.8 μs (max)
@ I_F = 16 mA , V_CC = 5 V,
R_L = 1.9 kΩ , Ta = 25 °C
• Construction mechanical rating
PIN CONFIGURATION (Top View)
7.62-mm pitch
10.16-mm pitch
standard type
TLPXXXF type
1
Creepage Distance
7.0 mm (min)
8.0 mm (min)
Clearance
7.0 mm (min)
8.0 mm (min)
Insulation Thickness
0.4 mm (min)
0.4 mm (min)
2
• UL recognized
: UL1577, File No. E67349
3
• Option (D4)
TÜV approved
: EN60747-5-2
Certificate No. R50033433
Maximum operating insulation voltage : 890 Vpk
Highest permissible over voltage : 8000 Vpk
SHIELD
6 ^{1 : ANODE}
2 : N.C.
3 : CATHODE
5 _{4 : EMITTER (GND)}
5 : COLLECTOR (OUTPUT)
4 _{6 : VCC}
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(D4)”
SCHEMATIC
I_F
1
V_F
I_CC
I_O
6 ^VCC
5 ^VO
3
SHIELD
GND
4
A 0.1-μF bypass capacitor must be
connected between pins 4 and 6.
(See Note 7.)
1
2007-10-01