TLP716F Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Plasma display panel High Speed Interface Factory Automation

TOSHIBA Photocoupler GaAℓAs IRED & Photo−IC
TLP716F
Plasma display panel
High Speed Interface
Factory Automation
4.58±0.25
654
TLP716F
Unit in mm
The TOSHIBA TLP716F consists of a GaAℓAs light emitting diode
and a high speed photodetector. This unit is 6-lead SDIP. TLP716F is 50%
smaller than 8PIN DIP and has suited the safety standard reinforced insulation
class. So, mounting area in safety standard required equipment can be
123
7.62±0.25
reduced.
Absolute maximum ratings and electrical characteristics are the same as the
TLP716 technical data sheets.
z Inverter Logic (totempole output)
1.27±0.2
0.4±0.1
0.75±0.25
11.7±0.3
z Package Type : SDIP6
z Guaranteed Performance Over Temperature : −40~100°C
z Power Supply Voltage : 4.5~5.5 V
z Input Thresholds Current : IFHL=6.5 mA(max.)
TOSHIBA
11-5J101
Weight：0.26 g (t yp .)
11-5J101
z Propagation delay Time (tpHL/ tpLH) : 75 ns(max.)
z Switching speed : 15 MBd(typ.) (NRZ)
z Common mode transient immunity : 10 kV/us(min.)
z Isolation voltage : 5000 Vrms(min.)
Pin Configuration (Top View)
z UL Recognized :UL1577, File No.E67349
z Option (D4)
TÜV Approved : EN60747−5−2
1
VCC ₆ ^1:ANODE
2:N.C.
Maximum Operating Insulation Voltage : 1140 V_PK
Highest Permissible Over Voltage
: 8000 V_PK
(Note): When an EN60747−5−2 approved type is needed,
Please designate “Option(D4)”
2
5 ^3:CATHODE
4:GND
3
GND
SHIELD
4
5:Vo
6:Vcc
z Construction Mechanical Rating
Creepage Distance
Clearance
Insulation Thickness
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
Truth Table
Input
H
L
LED
ON
OFF
Tr1
OFF
ON
Tr2
ON
OFF
Output
L
H
Schematic
I_F
1＋
VF
3－
I_CC
V_CC
6
Tr1
I_O
V_O
Tr2
5
SHIELD
0.1 μF bypass capacitor must be
connected between pins 6 and 4.
GND
4
1
2007-10-01