TLP705_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Plasma Display Panel

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP705
Plasma Display Panel.
Industrial Inverter
IGBT/Power MOS FET Gate Drive
4.58±0.25
654
TLP705
Unit in mm
TLP705 consists of a GaAℓAs light emitting diode and a integrated
photodetector.
This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8pin DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs.
123
7.62±0.25
• Peak output current
• Operating frequency
: ±0.45 A (max)
: 250kHz (max)
1.27±0.2
0.4±0.1
1.25±0.25
9.7±0.3
• Guaranteed performance over temperature : −40 to 100°C
• Supply current
: 3mA (max)
• Power supply voltage
: 10 to 20 V
TOSHIBA 11-5J1
Weight:0.26 g (t yp .)
11-5J1
• Threshold input current
• Switching time (t_pLH / t_pHL)
• Common mode transient immunity
: I_FLH = 8 mA (max)
: 200 ns (max)
:±10 kV/μs(min)
• Isolation voltage
: 5000 Vrms(min)
• UL Recognized
:UL1577, File No.E67349
• Construction Mechanical Rating
Pin Configuration (Top View)
7.62-mm pitch
10.16-mm pitch
standard type
TLPXXXF type
1
Creepage Distance
7.0 mm (min)
8.0 mm (min)
Clearance
Insulation Thickness
7.0 mm (min)
0.4 mm (min)
8.0 mm (min)
0.4 mm (min)
2
• Option (D4)
TÜV approved
: EN60747-5-2
3
Certificate No. R50033433
Maximum operating insulation voltage : 890 Vpk
Highest permissible over voltage
: 8000 Vpk
SHIELD
6
1: ANODE
2: NC
3: CATHODE
5
4: GND
5: V_O ( OUTPUT )
6: V_CC
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(D4)”
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
1
Schematic
I_F
1+
V_F
3−
(Tr1)
I_{CC 6}
V_CC
I_{O 5}
(Tr2)
V_O
SHIELD
4
GND
A 0.1 μF bypass capacitor must be connected
between pins 6 and 4. (See Note 6.)
2007-10-01