TLP705F Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Plasma Display Panel

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP705F
Plasma Display Panel
Industrial Inverter
IGBT/Power MOSFET Gate Drive
4.58±0.25
654
TLP705F
Unit in mm
TLP705F consists of a GaAℓAs light emitting diode and a integrated
photodetector.
This unit is 6-lead SDIP package. TLP705F is 50% smaller than 8PIN DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705F is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705F is capable of “direct” gate drive of lower Power IGBTs.
Absolute Maximum ratings and electrical characteristics are the same as
The TLP705 technical data sheets.
• Peak output current
: ±0.45 A (max)
• Operating frequency
: 250kHz (max)
• Guaranteed performance over temperature : −40 to 100°C
• Supply current
: 3mA (max)
• Power supply voltage
: 10 to 20 V
• Threshold input current
: I_FLH = 8 mA (max)
• Switching time (t_pLH / t_pHL)
: 200 ns (max)
• Common mode transient immunity
: ±10 kV/μs(min)
• Isolation voltage
: 5000 Vrms(min)
• UL Recognized
:UL1577, File No.E67349
• Construction Mechanical Rating
Creepage Distance
Clearance
Insulation Thickness
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
• Option (D4)
TÜV approved
: EN60747-5-2
Certificate No. R50033433
Maximum operating insulation voltage : 1140 Vpk
Highest permissible over voltage
: 8000 Vpk
123
7.62±0.25
1.27±0.2
0.4±0.1
0.75±0.25
11.7±0.3
TOSHIBA
11-5J101
Weight：0.26 g (t yp .)
11-5J101
Pin Configuration (top view)
1
2
3
SHIELD
6 ^{1: Anode}
2: NC
3: Cathode
5 _{4: GND}
5: V_O (output)
4 ^{6: V}CC
Truth Table
Input
LED
H
ON
L
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Schematic
I_F
1+
V_F
3−
I_{CC 6}
(Tr1)
V_CC
I_{O 5}
(Tr2)
V_O
SHIELD
4
GND
A 0.1 μF bypass capacitor must be connected
between pin 6 and 4. (See Note 6)
1
2007-10-01