TLP705 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Plasma Display Panel. Industrial Inverter IGBT/Power MOS FET Gate Drive

Preliminary
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP705
Plasma Display Panel.
Industrial Inverter
IGBT/Power MOS FET Gate Drive
4.58±0.25
654
TLP705
Unit in mm
The TOSHIBA TLP705 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8PIN DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705 is capable of “direct” gate drive of lowr Power IGBTs.
• Peak output current
: ±0.45 A (max)
• Operating frequency
: 250kHz (max)
• Guaranteed performance over temperature : −40 to 100°C
• Supply current
• Power supply voltage
• Threshold input current
• Switching time (t_pLH / t_pHL)
• Common mode transient immunity
: 3mA (max)
: 10 to 20 V
: I_FLH = 8 mA (max)
: 200 ns (max)
: 10 kV/µs
• Isolation voltage
: 5000 Vrms
• UL Recognized
• Construction Mechanical Rating
:UL1577, File No.E67349
7.62 mm pich
standard type
10.16 mm pich
TLPXXXF type
Creepage Distance
Clearance
Insulation Thickness
7.0 mm (Min)
7.0 mm (Min)
0.4 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.4 mm (Min)
123
7.62±0.25
1.27±0.2
0.4±0.1
1.25±0.25
10.0max
TOSHIBAç ç ç ç ç 11-5J1ç
Weightɿ0.26 g (t y p .)
11-5J1ç
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Pin Configuration (top view)
1
2
3
SHIELD
6
1: Anode
2: NC
3: Cathode
5
4: GND
5: V_O (output)
4
6: V_CC
1
Schematic
I_F
1+
V_F
3−
I_{CC 6}
(Tr1)
V_CC
I_{O 5}
(Tr2)
V_O
SHIELD
4
GND
A 0.1 µF bypass capacitor must be connected
between pin 6 and 4. (See Note 6)
2004-10-19