TLP666L-S Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs IRED and Photo−Triac

TOSHIBA Photocoupler GaAs IRED & Photo−Triac
TLP666L(S)
TLP666L(S)
Office Equipment
Household Appliances
Triac Drivers
Solid State Relays
Unit: mm
The TOSHIBA TLP666L(S) consists of a GaAs infrared emitting diode
optically coupled to a triac-output photocoupler featuring a zero-cross
voltage and is housed in a 6-pin DIP package.
Features
• Peak off-state voltage: 800 V (min)
• Trigger LED current: 10 mA (max)
• On-state current: 100 mA (max)
• Isolation voltage: 5000 Vrms (min)
• UL recognized: UL1577, file No. E67349
JEDEC
JEITA
TOSHIBA
―
―
11-7A9
• Option(D4) type
Weight: 0.39 g (typ.)
VDE approved: DIN EN 60747-5-2
Certificate No. 40009302
Maximum operating insulation voltage: 890 Vpk
Maximum permissible over voltage: 8000 Vpk
Note: When ordering an EN60747-5-2 approved device, "Option (D4)" should be designated.
When applying safety standard certification, use the standard part number, i.e. TLP666L.
• Construction mechanical rating
7.62 mm pitch
standard type
Creepage distance
Clearance
Insulation thickness
7.0 mm (min)
7.0 mm (min)
0.4 mm (min)
10.16 mm pitch
TLPXXXF type
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
Pin configuration (top view)
1
2
3
ZC
1: Anode
6 _{2: Cathode}
3: N.C.
4:Terminal 1
4 ^{6:Terminal 2}
ZC:Zero-cross Circuit
Start of commercial production
2006/10
1
2014-09-01