TLP666G Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Photocoupler GaAs Ired & Photo-Triac

TOSHIBA Photo Coupler GaAs Ired & Photo−Triac
TLP666G
Office machine
Household use equipment
Triac driver
Solid State Relay
TLP666G
Unit in mm
The TOSHIBA TLP666G consists of a zero voltage crossing turn−on
photo−triac optically coupled to a gallium arsenide infrared emitting
diode in a six lead plastic DIP.
· Peak off−state voltage: 400V(min.)
· Trigger LED current: 10mA(max.)
· On−state current: 100mA(max.)
· UL recognized: UL1577, file no. E67349
· Isolation voltage: 5000Vrms(min.)
· Option(D4) type
VDE approved: DIN VDE0884/08.87,
Certificate no.68383
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
(Note 1) When a VDE0884 approved type is needed,
please designate the “option(D4)”
· Structural parameter
Creepage distance: 7.0mm(min.)
Clearance: 7.0mm(min.)
Insulation thickness: 0.5mm(min.)
JEDEC
EIAJ
TOSHIBA
Weight: 0.44 g
―
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11−9A2
Pin Configurations (top view)
1
6
2
3
ZC
4
1 : Anode
2 : Cathode
3 : N.C.
4 : Terminal 1
6 : Terminal 2
1
2002-09-25