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TLP665L Datasheet, PDF (1/18 Pages) Toshiba Semiconductor – Photocouplers GaAs Infrared LED and Photo Triac
Photocouplers GaAs Infrared LED & Photo Triac
TLP665L,TLP665LF
TLP665L,TLP665LF
1. Applications
• Solid-State Relays
• Triac Drivers
• Home Electric Appliances
• Office Equipment
2. General
The TLP665L consists of a non zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting
diode. The TLP665L is housed in the DIP6 package and guarantees insulation thickness of 0.5 mm (min).
Therefore, the TLP665L meets the reinforced insulation class requirements of international safety standards.
3. Features
(1) Peak off-state voltage: 800 V (min)
(2) Non zero crossing functionary (NZC)
(3) Trigger LED current: 10 mA (max)
(4) On-state current: 100 mA (max)
(5) Isolation voltage: 5000 Vrms (min)
(6) Safety standards
UL-approved: UL1577 File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
CQC-approved: GB4943.1, GB8898
VDE-approved: Option (D4) EN60747-5-5 (Note)
Maximum operating insulation voltage: 890 Vpeak / 1140 Vpeak (Note1)
Highest permissible overvoltage: 8000 Vpeak
Note: When an EN60747-5-5 approved type is needed, please designate the Option (D4).
Note1: When maximum operating insulation voltage 1140 Vpeak is needed, please designate the TLP665LF.
Table 3.1 Mechanical Parameters
Characteristics
Creepage distances
7.62 mm Pitch
TLP665L
7.0 (min)
10.16 mm Pitch
TLP665LF
Unit
8.0 (min)
mm
Clearance distances
7.0 (min)
8.0 (min)
Internal isolation thickness
0.5 (min)
0.5 (min)
Table 3.2 Trigger LED Current (Note) (Unless otherwise specified, Ta = 25 )
Rank
IFT Rank
Marking
Test Condition
Trigger LED Current IFT Trigger LED Current IFT
(min)
(max)
Unit
None
(IFT7)
None
7
VT = 6 V
VT = 6 V

10
mA

7
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP665L (IFT7)
For safety standard certification, however, specify the part number alone.
Example: TLP665L
Start of commercial production
2014-11
1
2014-11-07
Rev.1.0