TLP665JF Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs Ired & Photo-Triac

TOSHIBA Photocoupler GaAs Ired & Photo−Triac
TLP665JF
Office Machine
Household Use Equipment
Triac Driver
Solid State Relay
TLP665JF
Unit in mm
The TOSHIBA TLP665JF consists of a photo−triac optically coupled to a
gallium arsenide infrared emitting diode in a six lead plastic DIP.
All parameters are tested to the specification of TLP665J.
(both condition and limits)
· Peak off−state voltage: 600 V (min.)
· Trigger LED current: 10 mA (max.)
· On−state current: 100 mA (max.)
· UL recognized: UL1577, file no. E67349
· Isolation voltage: 5000 Vrms (min.)
· Option (D4) type
VDE approved: DIN VDE0884 / 08.87,
Certificate no. 68383
Maximum operating insulation voltage: 630VPK
Highest permissible over voltage: 6000VPK
TOSHIBA
11−9A202
Weight: 0.44 g
(Note 1) When a VDE0884 approved type is needed,
please designate the “ Option (D4) ”
· Structural parameter
Creepage distance: 8.0mm (min.)
Clearance: 8.0mm (min.)
Insulation thickness: 0.5mm (min.)
· Conforming safety standards:
DIN 57 804 / VDE0804 / 1.83
DIN IEC65 / VDE0860 / 8.81
DIN IEC380 / VDE0806 / 8.81
DIN IEC435 / VDE0805 / Draft Nov. 84
DIN IEC601T1 / VDE0750T1 / 5.82
BS7002: 1989 (EN60950)
Pin Configurations (top view)
1
6
2
3
4
1: Anode
2: Cathode
3: NC
4: Terminal 1
6: Terminal 2
1
2002-09-25