TLP599G Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – PHOTOCOUPLER PHOTO RELAY

TOSHIBA Photocoupler Photo Relay
TLP599G
Telecommunication
Data Acquisition
Measurement Instrumentation
TLP599G
Unit in mm
The TOSHIBA TLP599G consists of a gallium arsenide infrared emitting
diode optically coupled to a photo−MOS FET in a six lead plastic DIP
package (DIP6).
The TLP599G is a bi-directional switch which can replace mechanical
relays in many applications.
· Peak off-state voltage: 400V (min.)
· On-state current: 120mA (max.) (A connection)
· On-state resistance: 30Ω (max.) (A connection)
· Insulation thickness: 0.4mm (max.)
· Isolation voltage: 2500Vrms (min.)
· UL recognized: UL1577, file no. E67349
· Trigger LED current (Ta = 25°C)
Classification
(Note 1)
(IFT2)
Standard
Trigger LED Current
(mA)
@I_ON = 120mA
Min.
Max.
—
2
—
5
(Note 1): Application type name for certification
test, please use standard product type
name, i.e.
TLP599G (IFT2) :TLP599G
Marking Of
Classification
T2
T2, blank
TOSHIBA
11−7A8
Pin Configuration (top view)
1
6 ^{1 : Anode}
2 : Cathode
2
5
3 : NC
4 : Drain D1
3
4
5 : Source
6 : Drain D2
Schematic
1
6
2
5
4
1
2002-09-25