TLP599B Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Telecommunication Data Acquisition Measurement Instrumentation

TOSHIBA Photocoupler Photo Relay
TLP599B
Telecommunication
Data Acquisition
Measurement Instrumentation
TLP599B
Unit in mm
The TOSHIBA TLP599B consists of a gallium arsenide infrared
emitting diode optically coupled to a photo−MOS FET in a six lead
plastic DIP (DIP6).
The TLP599B is a bi-directional switch which can replace mechanical
relays in many applications.
· Peak off−state voltage: 100V (min.)
· On−state current: 200mA (max.) (A connection)
· On−state resistance: 4Ω (max.) (A connection)
· Insulation thickness: 0.4mm(max.)
· Isolation voltage: 2500Vrms (min.)
· UL recognized: UL1577, file no. E67349
· Trigger LED current (Ta = 25°C)
TOSHIBA
Weight: 0.4g
11−7A8
Classification
(Note 1)
(IFT2)
Standard
Trigger LED Current
(mA)
@I_ON = 200mA
Min.
Max.
¾
2
¾
5
(Note 1): Application type name for certification
test, please use standard product type
name, i.e.
TLP599B (IFT2) : TLP599B
Marking Of
Classification
T2
T2, blank
Pin Configuration (top view)
1
6 _{1. : Anode}
2. : Cathode
2
5 ^{3. : NC}
4. : Drain D1
5. : Source
3
4 6. : Drain D2
Schematic
1
6
2
5
4
1
2002-09-25