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TLP591B_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver | |||
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TOSHIBA Photocoupler GaAâAs Ired & PhotoâDiode Array
TLP591B
Telecommunication
Programmable Controllers
MOS Gate Driver
MOS FET Gate Driver
The TOSHIBA TLP591B consists of an aluminum galium arsenide
infrared emitting diode optically coupled to a series connected
photoâdiode array in a six lead plastic DIP package.
TLP591B is suitable for MOS FET gate driver.
TLP591B has an internal shunt resistor to optimize switching speed.
⢠UL recognized: UL1577, file no. E67349
TLP591B
Unit in mm
Maximum Ratings (Ta = 25°C)
TOSHIBA
11â7A9
Characteristic
Symbol
Forward current
Forward current derating
(Ta ⥠25°C)
Pulse forward current
(100μs pulse, 100pps)
Reverse voltage
Junction temperature
Forward current
Reverse voltage
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 sec.)
Isolation voltage
(AC, 1 min., R.H.⤠60%)
(Note 1)
IF
ÎIF /°C
IFP
VR
Tj
IFD
VRD
Tj
Tstg
Topr
Tsol
BVS
Rating
50
â0.5
1
3
125
50
10
125
â55~125
â40~85
260
2500
Unit
mA
mA /°C
A Pin Configuration (top view)
V
°C
1
6
μA
2
V
°C
3
4
°C
1. : Anode
°C
2. : Cathode
3. : NC
°C
4. : Cathode
Vrms
6. : Anode
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3
shorted together, and pins 4 and 6 shorted together.
1
2002-09-25
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