TLP591B Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaALAs Ired & Photo-Diode Array

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array
TLP591B
Telecommunication
Programmable Controllers
MOS Gate Driver
MOS FET Gate Driver
The TOSHIBA TLP591B consists of an aluminum galium arsenide
infrared emitting diode optically coupled to a series connected
photo−diode array in a six lead plastic DIP package.
TLP591B is suitable for MOS FET gate driver.
TLP591B has an internal shunt resistor to optimize switching speed.
· UL recognized: UL1577, file no. E67349
TLP591B
Unit in mm
Maximum Ratings (Ta = 25°C)
TOSHIBA
11−7A9
Characteristic
Symbol
Forward current
Forward current derating
(Ta ≥ 25°C)
Pulse forward current
(100µs pulse, 100pps)
Reverse voltage
Junction temperature
Forward current
Reverse voltage
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 sec.)
Isolation voltage
(AC, 1 min., R.H.≤ 60%)
(Note 1)
I_F
∆I_F /°C
I_FP
V_R
T_j
I_FD
V_RD
T_j
T_stg
T_opr
T_sol
BV_S
Rating
50
-0.5
1
3
125
50
10
125
-55~125
-40~85
260
2500
Unit
mA
mA /°C
A _{Pin Configuration (top view)}
V
°C
1
6
µA
2
V
°C
3
4
°C
1. : Anode
°C
2. : Cathode
°C
3. : NC
4. : Cathode
V_rms
6. : Anode
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3
shorted together, and pins 4 and 6 shorted together.
1
2002-09-25