TLP590B Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – GaAS As Ired & Photo−Diode Array

TOSHIBA Photocoupler GaAℓAs Ired & Photo−Diode Array
TLP590B
Telecommunication
Programmable Controllers
Mos Gate Driver
MOS FET Gate Driver
TLP590B
Unit in mm
The TOSHIBA TLP590B consists of an aluminum galium arsenide
infrared emitting diode optically coupled to a series connected photo−
diode array in a six lead plastic DIP package.
TLP590B is suitable for MOS FET gate driver.
· UL recognized: UL1577, file No. E67349
Short Current
Type
Name
TLP590B
Classification
C20
Standard
Short Current
(min.) I_F
20µA
12µA
10mA
Marking Of
Classification
20
20, blank
(Note) Application type name for certification test, please
use standard product type name, i.e.
TLP590B(C20): TLP590B
TOSHIBA
Weight: 0.39g
11−7A9
Maximum Ratings (Ta = 25°C)
Pin Configuration(top view)
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating
(Ta ≥ 25°C)
Pulse forward current
(100µs pulse, 100 pps)
Reverse voltage
Junction temperature
Foward current
Reverse voltage
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
(10sec.)
Isolation voltage
(AC, 1 min., R.H. ≤ 60%) (Note 1)
I_F
∆I_F / °C
I_FP
V_R
T_j
I_FD
V_RD
T_j
T_stg
T_opr
T_sol
BV_S
50
-0.5
1
3
125
50
10
125
-55~125
-40~85
260
2500
mA
mA / °C
A
V
°C
µA
V
°C
°C
°C
°C
Vrms
(Note 1) Device considered a two terminal device: Pins 1, 2 and 3
shorted together, and pins 4 and 6 shorted together.
1
6
2
3
4
1. : Anode
2. : Cathode
3. : NC
4. : Cathode
6. : Anode
1
2002-09-25