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TLP523_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Transistor | |||
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TLP523,TLP523â2,TLP523â4
TOSHIBA Photocoupler GaAs Ired & PhotoâTransistor
TLP523, TLP523â2, TLP523â4
Programmable Controllers
DCâOutput Module
Solid State Relay
Unit in mm
The TOSHIBA TLP523, â2 and â4 consists of a gallium arsenide
infrared emitting diode coupled with a silicon, darlington connected,
phototransistor which has an integral baseâemitter resistor to optimize
switching speed and elevated temperature characteristics.
The TLP523â2 offers two isolated channels in an eight lead plastic DIP
package, while the TLP523â4 provide four isolated channels per
package.
⢠Current transfer ratio: 500% (min.) (IF = 1 mA)
⢠Isolation voltage: 2500 Vrms (min.)
⢠Collectorâemitter voltage: 55 V (min.)
⢠Leakage current: 10μA (max.) (Ta = 85°C)
⢠UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.26 g
11â5B2
Pin Configurations (top view)
TLP523
TLP523-2
TLP523-4
1
41
81
16
2
32
72
15
1 : Anode
3
63
14
2 : Cathode
3 : Emitter
4
54
13
4 : Collector
1, 3 : Anode
5
12
2, 4 : Cathode
5, 7 : Emitter
6
11
6, 8 : Collector
7
10
8
9
1, 3, 5, 7 : Anode
2, 4, 6, 8 : Cathode
9, 11, 13, 15 : Emitter
10, 12, 14, 16: Collector
TOSHIBA
Weight: 0.54 g
11â10C4
TOSHIBA
Weight: 1.1 g
11â20A3
1
2007-10-01
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