TLP421F Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Photocoupler GaAs IRed & Photo-Transistor

TOSHIBA Photocoupler GaAs IRed & Photo−Transistor
TLP421F
TLP421F
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
Unit in mm
The TOSHIBA TLP421F consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
Maximum rating and electrical characteristics are the same as TLP421
technical datasheet.
· Collector−emitter voltage: 80V (min)
· Current transfer ratio: 50% (min)
Rank GB: 100% (min)
· Isolation voltage: 5000 Vrms (min)
· UL recognized: UL1577
· BSI approved: BS EN60065: 1994
Approved no. 8411
BS EN60950: 1992
Approved no. 8412
· SEMKO approved: EN60065, EN60950, EN60335
Approved no. 9910249 / 01
TOSHIBA
11−5B202
Weight: 0.26 g
Pin Configurations
(top view)
1
4
2
3
1 : ANODE
2 : CATHODE
3 : EMITTER
4 : COLLECTOR
1
2002-09-25