TLP371_07 Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – GaAs Ired & Photo−Transistor

TLP371,TLP372
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP371, TLP372
Office Machine
Household Use Equipment
Telecommunication
Solid State Relay
Programmable Controllers
Unit in mm
The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
infrared emitting diode optically coupled to a darlington connected
photo−transistor which has an integrated base−emitter resistor to
optimize switching speed and elevated temperature characteristics in a
six lead plastic DIP package.
TLP372 is no−base internal connection for high−EMI environments.
• Current transfer ratio: 1000% (min) (I_F = 1mA)
• Isolation voltage: 5000 Vrms (min)
• UL recognized: UL1577, file no. E67349
TOSHIBA
Weight: 0.4g
11−7A8
Pin Configurations (top view)
TLP371
1
6
TLP372
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : Base
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Emitter
5 : Collector
6 : NC
1
2007-10-01