TLP351F Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – GaAℓAs IRED + Photo IC

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP351F
Inverter for Air Conditioner
IGBT/Power MOSFET Gate Drive
Industrial Inverter
TLP351F
Unit: mm
The TOSHIBA TLP351F consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351F is suitable for gate driving circuit of IGBT or power MOSFET.
Especially TLP351F is capable of “direct” gate drive of lower Power
IGBTs.
Absolute maximum ratings and electrical characteristics are the same as
TLP351 technical datasheet.
• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : I_F = 5 mA (max)
• Switching time (t_pLH/t_pHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
• Construction mechanical rating
• Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 1140VPK
Highest Permissible Over Voltage
: 6000VPK
TOSHIBA
11-10C402
Weight: 0.54 g (typ.)
Pin Configuration (top view)
(Note): When an EN60747-5-2 approved type is needed,
1
Please designate “Option(D4)”
• Construction mechanical rating
2
7.62mm pitch 10.16mm pitch
3
TLP351 type
TLP351F type
Creepage distance
6.4 mm (min)
8.0 mm (min)
4
Clearance
6.4 mm (min)
8.0 mm (min)
Insulation thickness 0.4 mm (min)
0.4 mm (min)
8
1: NC
2: Anode
3: Cathode
7
4: NC
5: GND
6
6: V_O (output)
7: NC
5
8: V_CC
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Schematic
I_F
2+
V_F
3−
(Tr1)
I_CC
V_CC
8
I_O
(Tr2)
V_O
6
GND
5
A 0.1 μF bypass capacitor must be connected
between pin 8 and 5.
1
2007-10-01