TLP351 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP351
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
TLP351
Unit: mm
The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power
IGBTs.
• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : I_F = 5 mA (max)
• Switching time (t_pLH/t_pHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
• Option(D4)
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 4000VPK
(Note):When a EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Pin Configuration (top view)
1
8
1: NC
2: Anode
3: Cathode
2
7
4: NC
5: GND
3
6
6: V_O (output)
7: NC
4
5
8: V_CC
Schematic
I_F
2+
V_F
3−
(Tr1)
I_CC
V_CC
8
I_O
(Tr2)
V_O
6
GND
5
A 0.1 μF bypass capacitor must be connected
between pin 8 and 5.
1
2010-06-17