TLP350_07 Datasheet, PDF (1/9 Pages) Toshiba Semiconductor – GaAℓAs IRED + Photo IC

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP350
Industrial Inverter
Inverter for Air Conditioner
IGBT/Power MOSFET Gate Drive
IH(Induction Heating)
TLP350
Unit: mm
The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an
integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350 is suitable for gate driving IGBTs or power MOSFETs.
• Peak output current : IO = ±2.5A (max)
• Guaranteed performance over temperature : −40 to 100°C
• Supply current : ICC = 2 mA (max)
• Power supply voltage: VCC = 15 to 30 V
• Threshold input current : I_FLH = 5 mA (max)
• Switching time (t_pLH/t_pHL) : 500 ns (max)
• Common mode transient immunity : 15 kV/μs
• Isolation voltage : 3750 Vrms
• UL Recognized : UL1577,File No.E67349
• Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage
: 6000VPK
(Note):When a EN 60747-5-2 approved type is needed,
Please designate “Option(D4)”
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Truth Table
Pin Configuration (top view)
Input
LED
Tr1
Tr2
Output
1
H
ON
ON
OFF
H
2
L
OFF
OFF
ON
L
3
4
8
1: NC
2: Anode
3: Cathode
7
4: NC
5: GND
6
6: V_O (output)
7: NC
5
8: V_CC
Schematic
I_F
2+
V_F
3−
I_{CC 8}
(Tr1)
V_CC
I_{O 6}
(Tr2)
V_O
5
GND
A 0.1 μF bypass capacitor must be connected
between pins 8 and 5. (See Note 6)
1
2007-10-01