TLP350F Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – GaAℓAs IRED + Photo IC

TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP350F
Industrial Inverter
Inverter for Air Conditioner
IGBT/Power MOSFET Gate Drive
IH(Induction Heating)
TLP350F
Unit: mm
The TOSHIBA TLP350F consists of a GaAℓAs light-emitting diode and
an integrated photodetector.
This unit is an 8-lead DIP package.
The TLP350F is suitable for gate driving IGBTs or power MOSFETs.
Absolute maximum ratings and electrical characteristics are the same as
TLP350technical datasheet.
• Peak output current: IO = ±2.5A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current:ICC = 2 mA (max)
• Power supply voltage: VCC = 15 to 30 V
• Threshold input current : I_FLH = 5 mA (max)
• Switching time (t_pLH/t_pHL) : 500 ns (max)
• Common mode transient immunity: 15 kV/μs
• Isolation voltage: 3750 Vrms
• UL Recognized : UL1577,File No.E67349
• Option(D4)
VDE Approved : DIN EN 60747-5-2
Maximum Operating Insulation Voltage : 1140VPK
Highest Permissible Over Voltage
: 6000VPK
TOSHIBA
11-10C402
Weight: 0.54 g (typ.)
Pin Configuration (top view)
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option(D4)”
1
• Construction mechanical rating
2
7.62mm pitch
TLP350 type
10.16mm pitch ₃
TLP350F type
Creepage distance 6.4 mm (min) 8.0 mm (min)
4
Clearance
6.4 mm (min) 8.0 mm (min)
Insulation thickness 0.4 mm (min) 0.4 mm (min)
8
1: NC
2: Anode
3: Cathode
7
4: NC
5: GND
6
6: V_O (output)
7: NC
5
8: V_CC
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
Schematic
I_F
2+
V_F
3−
I_{CC 8}
(Tr1)
V_CC
I_{O 6}
(Tr2)
V_O
5
GND
A 0.1 μF bypass capacitor must be connected
between pins 8 and 5. (See Note 6)
1
2007-10-01