TLP350 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Inverter for Air Conditioner, IGBT/Power MOS FET Gate Drive, Industrial Inverter

Preliminary
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP350
Inverter for Air Conditioner
IGBT/Power MOS FET Gate Drive
Industrial Inverter
TLP350
Unit: mm
The TOSHIBA TLP350 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 8-lead DIP package.
TLP350 is suitable for gate driving circuit of IGBT or power MOS FET..
• Peak output current: IO = ±2.0 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current:ICC = 2 mA (max)
• Power supply voltage: VCC = 15 to 30 V
• Threshold input current : IFLH = 5 mA (max)
• Switching time (tpLH/tpHL) : 500 ns (max)
• Common mode transient immunity: 15 kV/µs
• Isolation voltage: 3750 Vrms
Truth Table
Input
H
L
LED
ON
OFF
Tr1
ON
OFF
Tr2
OFF
ON
Output
H
L
JEDEC
―
JEITA
―
TOSHIBA
11-10C4
Weight: 0.54 g (typ.)
Pin Configuration (top view)
1
8
1: NC
2: Anode
2
7
3: Cathode
4: NC
5: GND
3
6
6: V_O (output)
7: NC
4
5
8: V_CC
Schematic
I_F
2+
V_F
3−
I_{CC 8}
(Tr1)
V_CC
I_{O 6}
(Tr2)
V_O
5
GND
A 0.1 µF bypass capacitor must be connected
between pin 8 and 5. (See Note 6)
1
2003-10-27