TLP285-4 Datasheet, PDF (1/16 Pages) Toshiba Semiconductor – TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR

TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR
TLP285-4
TLP285-4
Programmable Controllers
Power Supplies
Hybrid ICs
Unit in mm
TLP 285 -4
The Toshiba TLP285-4 consists of photo transistor, optically coupled to a
gallium arsenide infrared emitting diode. TLP285-4 is housed in the SOP16
package, very small and thin coupler.
Since TLP285-4 are guaranteed wide operating temperature (Ta=-55 to 110
˚C) and high isolation voltage (3750Vrms), it’s suitable for high-density
surface mounting applications such as programmable controllers and hybrid
ICs.
z Collector-Emitter Voltage : 80 V (min)
z Current Transfer Ratio
Rank GB
: 50% (min)
: 100% (min)
z Isolation Voltage
: 3750 Vrms (min)
z Guaranteed performance over -55 to 110 ˚C
z UL Recognized
: UL1577 , File No. E67349
cUL Recognized
: CSA Component Acceptance Service No.5A
z BSI (under application) : BS EN 60065: 2002,
: BS EN 60950-1: 2006
z Option (V4)
VDE approved
: EN60747-5-2
Maximum operating insulation voltage : 707 Vpk
Highest permissible over voltage
: 6000 Vpk
( Note ) When a EN60747-5-2 approved type is needed,
please designate the “Option(V4)”
Construction Mechanical Rating
Creepage Distance
Clearance
Insulation Thickness
5.0 mm (min)
5.0 mm (min)
0.4 mm (min)
TOSHIBA
11-10F1
Weight: 0.19 g (typ.)
Pin Configuration
TLP285-4
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
1,3,5,7 :ANODE
2,4,6,8 :CATHODE
9,11,13,15 :EMITTER
10,12,14,16 :COLLECTOR
1
2009-05-27